Academic literature on the topic 'Simulation in nanoelectronics'
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Journal articles on the topic "Simulation in nanoelectronics"
Melnyk, Oleksandr, and Viktoriia Kozarevych. "SIMULATION OF PROGRAMMABLE SINGLE-ELECTRON NANOCIRCUITS." Bulletin of the National Technical University "KhPI". Series: Mathematical modeling in engineering and technologies, no. 1 (March 5, 2021): 64–68. http://dx.doi.org/10.20998/2222-0631.2020.01.05.
Full textFortes, A. B., J. Figueiredo, and M. S. Lundstrom. "Virtual Computing Infrastructures for Nanoelectronics Simulation." Proceedings of the IEEE 93, no. 10 (October 2005): 1839–47. http://dx.doi.org/10.1109/jproc.2005.853545.
Full textde Falco, Carlo, and Massimiliano Culpo. "Dynamical iteration schemes for multiscale simulation in nanoelectronics." PAMM 8, no. 1 (December 2008): 10061–64. http://dx.doi.org/10.1002/pamm.200810061.
Full textCulpo, Massimiliano, and Carlo de Falco. "Dynamical iteration schemes for coupled simulation in nanoelectronics." PAMM 8, no. 1 (December 2008): 10065–68. http://dx.doi.org/10.1002/pamm.200810065.
Full textChou, Hung Mu, Shao Ming Yu, Jam Wem Lee, and Yiming Li. "A compact model for electrostatic discharge protection nanoelectronics simulation." International Journal of Nanotechnology 2, no. 3 (2005): 226. http://dx.doi.org/10.1504/ijnt.2005.008061.
Full textSangiorgi, Enrico, Asen Asenov, Herbert S. Bennett, Robert W. Dutton, David Esseni, Martin D. Giles, Masami Hane, et al. "Foreword Special Issue on Simulation and Modeling of Nanoelectronics Devices." IEEE Transactions on Electron Devices 54, no. 9 (September 2007): 2072–78. http://dx.doi.org/10.1109/ted.2007.905342.
Full textGargini, Paolo A. "Silicon Nanoelectronics and Beyond." Journal of Nanoparticle Research 6, no. 1 (February 2004): 11–26. http://dx.doi.org/10.1023/b:nano.0000023248.65742.6c.
Full textTatarnikov, Denis A., and Aleksey V. Godovykh. "Molecular Dynamic Simulation of Carbon Nanostructures Formation." Advanced Materials Research 1040 (September 2014): 92–96. http://dx.doi.org/10.4028/www.scientific.net/amr.1040.92.
Full textBabiker, S., A. Asenov, J. R. Barker, and S. P. Beaumont. "Quadrilateral Finite Element Monte Carlo Simulation of Complex Shape Compound FETs." VLSI Design 6, no. 1-4 (January 1, 1998): 127–30. http://dx.doi.org/10.1155/1998/51378.
Full textDinh, Hien Sy. "SIMULATION OF CURRENT-VOLTAGE CHARACTERISTICS OF SPIN FIELD EFFECT TRANSISTOR USING NEMO-VN2." Science and Technology Development Journal 15, no. 3 (September 30, 2012): 5–16. http://dx.doi.org/10.32508/stdj.v15i3.1812.
Full textDissertations / Theses on the topic "Simulation in nanoelectronics"
Weston, Joseph. "Numerical methods for time-resolved quantum nanoelectronics." Thesis, Université Grenoble Alpes (ComUE), 2016. http://www.theses.fr/2016GREAY040/document.
Full textRecent technical progress in the field of quantum nanoelectronics have lead toexciting new experiments involving coherent single electron sources.When quantum electronic devices are manipulated on time scales shorterthan the characteristic time of flight of electrons through the device, a wholeclass of conceptually new possibilities become available. In order totreat such physical situations, corresponding advances in numerical techniquesand their software implementation are required both as a tool to aidunderstanding, and also to help when designing the next generation ofexperiments in this domain.Recent advances in numerical methods have lead to techniques for which thecomputation times scales linearly with the system volume, but as thesquare of the simulation time desired. This is particularly problematicfor cases where the characteristic dwell time of electrons in the centraldevice is much longer than the ballistic time of flight. Here, we proposean improvement to an existing wavefunction based algorithm fortreating time-resolved quantum transport which scales linearly in both thesystem volume and desired simulation time. We use this technique tostudy a number of interesting physical cases. In particular we find that theapplication of a train of voltage pulses to an electronic interferometercan be used to stabilise the dynamical modification of the interferencethat was recently proposed. We use this to perform spectroscopy on Majoranaand Andreev resonances in hybrid superconductor-nanowire structures.The numerical algorithms are implemented as an extension to the Kwantquantum transport software. This implementation is used for all the numericalresults presented here, in addition to other work, covering a wide varietyof physical applications: quantum Hall effect, Floquet topological insulators,Fabry-Perot interferometers and superconducting junction
Kudrya, V. G., and D. A. Voronenko. "Designing Nanotechnology Matching Devices." Thesis, Sumy State University, 2013. http://essuir.sumdu.edu.ua/handle/123456789/35357.
Full textOkobiah, Oghenekarho. "Geostatistical Inspired Metamodeling and Optimization of Nanoscale Analog Circuits." Thesis, University of North Texas, 2014. https://digital.library.unt.edu/ark:/67531/metadc500074/.
Full textReinke, Charles M. "Design, simulation, and characterization toolset for nano-scale photonic crystal devices." Diss., Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/33932.
Full textCao, Jiang. "Transistors à effet tunnel à base de matériaux bidimensionnels." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAT009/document.
Full textThe successful isolation of graphene in 2004 has attracted great interest to search for potential applications of this unique material and other newborn members of the two-dimensional (2D) family in electronics, optoelectronics, spintronics and other fields. Compared to graphene, the 2D transition metal dichalcogenides (TMDs) have the advantage of being semiconductors, which would allow their use for logic devices. In the past ten years, significant developments have been made in this area, where opportunities and challenges co-exist.This thesis presents the results of quantum transport simulations of novel 2D-material-based tunnel field-effect transistors for ultra-low-power digital applications. Due to their size, such devices are intrinsically dominated by quantum effects. This requires the adoption of a fairly general theory of transport, such as the nonequilibrium Green's functions (NEGF) formalism, which is a method extensively used for the simulation of electron transport in nanostructures.In the first part of this thesis, a brief introduction about the 2D materials, their synthesis and applications is presented. Then, the NEGF formalism is concisely reviewed. This approach is applied to the simulation of two different models of vertical tunnel field-effect transistors based on 2D-TMD van der Waal heterojunctions (MoS2 and WTe2). To properly describe the system, a coupled effective mass Hamiltonian has been implemented and carefully calibrated to experimental measurements and density functional theory to reproduce the band structure in the energy range of interest for the simulations.This thesis not only demonstrates the ultra-steep subthreshold slope potentially expected for these devices, but also provides a physical insight into the impact of the transistor geometry on its performances. In the last and more exploratory part of the manuscript, the effect of rotational misalignment within the two layers of the heterostructure is investigated. Experimentally, such a disorder is difficult to avoid, and it can substantially affect the device performances.Through accurate quantum simulations and deep physical analysis, this study sheds light on the design challenges to be addressed for the development of efficient tunnel field-effect transistors based on 2D materials
Rykaczewski, Konrad. "Electron beam induced deposition (EBID) of carbon interface between carbon nanotube interconnect and metal electrode." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/31773.
Full textCommittee Chair: Dr. Andrei G. Fedorov; Committee Member: Dr. Azad Naeemi; Committee Member: Dr. Suresh Sitaraman; Committee Member: Dr. Vladimir V. Tsukruk; Committee Member: Dr. Yogendra Joshi. Part of the SMARTech Electronic Thesis and Dissertation Collection.
Lee, Jae Woo. "Electrical characterization and modeling of low dimensional nanostructure FET." Thesis, Grenoble, 2011. http://www.theses.fr/2011GRENT070/document.
Full textAt the beginning of this thesis, basic and advanced device fabrication process which I haveexperienced during study such as top-down and bottom-up approach for the nanoscale devicefabrication technique have been described. Especially, lithography technology has beenfocused because it is base of the modern device fabrication. For the advanced device structure,etching technique has been investigated in detail.The characterization of FET has been introduced. For the practical consideration in theadvanced FET, several parameter extraction techniques have been introduced such as Yfunction,split C-V etc.FinFET is one of promising alternatives against conventional planar devices. Problem ofFinFET is surface roughness. During the fabrication, the etching process induces surfaceroughness on the sidewall surfaces. Surface roughness of channel decreases the effectivemobility by surface roughness scattering. With the low temperature measurement andmobility analysis, drain current through sidewall and top surface was separated. From theseparated currents, effective mobilities were extracted in each temperature conditions. Astemperature lowering, mobility behaviors from the transport on each surface have differenttemperature dependence. Especially, in n-type FinFET, the sidewall mobility has strongerdegradation in high gate electric field compare to top surface. Quantification of surfaceroughness was also compared between sidewall and top surface. Low temperaturemeasurement is nondestructive characterization method. Therefore this study can be a propersurface roughness measurement technique for the performance optimization of FinFET.As another quasi-1 D nanowire structure device, 3D stacked SiGe nanowire has beenintroduced. Important of strain engineering has been known for the effective mobility booster.The limitation of dopant diffusion by strain has been shown. Without strain, SiGe nanowireFET showed huge short channel effect. Subthreshold current was bigger than strained SiGechannel. Temperature dependent mobility behavior in short channel unstrained device wascompletely different from the other cases. Impurity scattering was dominant in short channelunstrained SiGe nanowire FET. Thus, it could be concluded that the strain engineering is notnecessary only for the mobility booster but also short channel effect immunity.Junctionless FET is very recently developed device compare to the others. Like as JFET,junctionless FET has volume conduction. Thus, it is less affected by interface states.Junctionless FET also has good short channel effect immunity because off-state ofjunctionless FET is dominated pinch-off of channel depletion. For this, junctionless FETshould have thin body thickness. Therefore, multi gate nanowire structure is proper to makejunctionless FET.Because of the surface area to volume ratio, quasi-1D nanowire structure is good for thesensor application. Nanowire structure has been investigated as a sensor. Using numericalsimulation, generation-recombination noise property was considered in nanowire sensor.Even though the surface area to volume ration is enhanced in the nanowire channel, devicehas sensing limitation by noise. The generation-recombination noise depended on the channelgeometry. As a design tool of nanowire sensor, noise simulation should be carried out toescape from the noise limitation in advance.The basic principles of device simulation have been discussed. Finite difference method andMonte Carlo simulation technique have been introduced for the comprehension of devicesimulation. Practical device simulation data have been shown for examples such as FinFET,strongly disordered 1D channel, OLED and E-paper
Maassen, Jesse. "First principles simulations of nanoelectronic devices." Thesis, McGill University, 2012. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=106463.
Full textComme la miniaturisation des dispositifs commence à révéler la nature atomique des matériaux, où les liaisons chimiques et les effets quantiques sont importants, nous devons recourir à une théorie sans paramètre pour obtenir des prédictions. Cette thèse étudie les propriétés de transport quantique des dispositifs nanoélectroniques en utilisant des méthodes ab initio atomiques. Notre formalisme théorique combine la théorie de la fonctionnelle de la densité (DFT) avec les fonctions de Green hors-équilibres (NEGF). Résoudre l'Hamiltonien DFT de manière auto-consistante avec la densité de charge NEGF permet de simuler des systèmes hors-équilibres sans utiliser des paramètres. Cette technique sophistiquée a été utilisée pour étudier trois problèmes liés au domaine de la nanoélectronique. Premièrement, nous avons étudié le rôle des contacts métalliques (Cu, Ni et Co) sur les caractéristiques de transport des dispositifs à base de graphène. Dans le cas du Cu, le graphène est simplement dopé en électrons (décalage du niveau de Fermi = −0.7 eV) ce qui crée une signature unique dans le profil de conduction permettant d'extraire le niveau de dopage. Avec Ni et Co, la formation de bandes interdites dépendantes du spin détruit la dispersion linéaire des états du graphène ce qui permet d'atteindre une efficacité d'injection de spin de 60% et 80%, respectivement. Deuxièmement, nous avons étudié comment des distributions de dopage contrôlées dans les nano-transistors en Si pourraient supprimer les courants de fuite à l'état OFF. En supposant que les dopants (B et P) sont confinés dans des régions de 1.1 nm dans le canal, nous avons découvert de grandes variations de conductances (Gmax/Gmin ~ 10^5) en fonction de l'emplacement du dopage. Les plus grandes fluctuations surviennent lorsque les dopants sont à proximité des électrodes. Nos résultats indiquent que si les dopants sont éloignés des électrodes, d'une distance égale à 20% de la longueur du canal, le courant tunnel peut être supprimé par un facteur de 2 par rapport au dopage uniforme. Ainsi, l'ingénierie du dopage pourrait réduire les variations d'un dispositif à un autre et diminuer le courant de fuite. Dernièrement, nous avons intégré un modèle de déphasage dans notre théorie de transport ab initio qui a été utilisé pour étudier l'effet des collisions dans trois systèmes différents. Nos calculs ont révélé le rôle complexe du déphasage; parfois la conduction augmente ou diminue selon le système. Nous avons démontré que la rétrodiffusion, présent dans ce modèle, permet de récupérer la loi d'Ohm.
Huang, Jun, and 黃俊. "Efficiency enhancement for nanoelectronic transport simulations." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2013. http://hdl.handle.net/10722/196031.
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Electrical and Electronic Engineering
Doctoral
Doctor of Philosophy
Zörgiebel, Felix. "Silicon Nanowires for Biosensor Applications." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2017. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-230675.
Full textNanostructures have attracted great attention not only in scientific research, but also in engineering applications during the last decades. Especially in combination with biological systems, whose complex function is controlled from nanoscale building blocks, nanotechnological developments find a huge field of applications in the medical sector. This work is dedicated to the functional understanding and technical implementation of silicon nanowires for future medical sensor applications. In contrast to doped silicon nanowire based sensors, this work is focussed on pure, undoped silicon nanowires, which have lower demands on production techniques and use Schottky-barriers as electric field detectors. The pH and biosensing capabilities of such undoped silicon nanowire field effect transistors were investigated theoretically and experimentally and further integrated in a lab-on-a-chip device as well as a small-scale multiplexer measurement device. In a second separate part, the optical sensing properties of undoped silicon nanowires were theoretically modeled. The main contents of both parts are shortly described in the following paragraphs. A multiscale model of silicon nanowire FETs to describe the charge transport in liquid surrounding in a quantum mechanical framework was developed to investigate the sensing properties of the nanowire sensors in general. The model set the basis for the understanding of the subsequent experimental investigations of noise characterization, pH sensitivity and biosensing properties. With the help of a novel gate sweeping measurement method the optimal working point of the sensors was determined and the high sensor quality could be quantified in terms of an empirical mathematical model. The sensor was then used for measurements of medically relevant concentrations of the Thrombin protein, providing a proof-of-concept for medical applications for our newly developed sensor. In order to exploit the small size of our sensors for technical applications we integrated the devices in lab-on-a-chip system with a microfluidic droplet generation module. There they were used to measure the pH and ionic concentration of droplets. Finally a portable multiplex measurement device for silicon nanowire sensors as well as other ion sensitive FETs was developed in cooperation with the IAVT at TU Dresden (Institut für Aufbau- und Verbindungstechnik). The second part of this thesis investigates the usability of silicon nanowires for optical sensor applications from a theoretical point of view. Therefore a method for the extraction of Raman and Infrared spectra from molecular dynamics simulations was developed. The method was applied to undoped silicon nanowires and shows that the surface properties of the nanowires has a significant effect on optical spectra. These results demonstrate the relevance of semiconductor nanostructures for applications in optical spectroscopy
Books on the topic "Simulation in nanoelectronics"
Günther, Michael, ed. Coupled Multiscale Simulation and Optimization in Nanoelectronics. Berlin, Heidelberg: Springer Berlin Heidelberg, 2015. http://dx.doi.org/10.1007/978-3-662-46672-8.
Full textGünther, Michael. Coupled Multiscale Simulation and Optimization in Nanoelectronics. Springer, 2015.
Find full textGünther, Michael. Coupled Multiscale Simulation and Optimization in Nanoelectronics. Springer, 2016.
Find full textBook chapters on the topic "Simulation in nanoelectronics"
Denk, G. "Circuit Simulation for Nanoelectronics." In Scientific Computing in Electrical Engineering, 13–20. Berlin, Heidelberg: Springer Berlin Heidelberg, 2006. http://dx.doi.org/10.1007/978-3-540-32862-9_2.
Full textThoma, R., H. J. Peifer, W. L. Engl, W. Quade, R. Brunetti, and C. Jacoboni. "Impact Ionization for Electrons in Si with Monte Carlo Simulation." In Granular Nanoelectronics, 527–30. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4899-3689-9_39.
Full textYamada, T., A. M. Kriman, and D. K. Ferry. "Monte Carlo Simulation of Lateral Surface Superlattices in a Magnetic Field." In Granular Nanoelectronics, 515–18. Boston, MA: Springer US, 1991. http://dx.doi.org/10.1007/978-1-4899-3689-9_36.
Full textDollfus, Philippe, and François Triozon. "Introduction: Nanoelectronics, Quantum Mechanics, and Solid State Physics." In Simulation of Transport in Nanodevices, 1–30. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2016. http://dx.doi.org/10.1002/9781118761793.ch1.
Full textPala, Marco. "Quantum Simulation of Silicon-Nanowire FETs." In Semiconductor-On-Insulator Materials for Nanoelectronics Applications, 237–49. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-15868-1_13.
Full textKotabagi, Sujata Sanjay, and P. Subbanna Bhat. "Design and Simulation of Fourth-Order Delta-Sigma Modulator-MASH Architecture." In Nanoelectronics, Circuits and Communication Systems, 625–41. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-7486-3_54.
Full textRaghunath, B. H., H. S. Aravind, N. Praveen, P. Dinesha, and T. C. Manjunath. "Mathematical Modeling and Simulation of a Nanorobot Using Nano-hive Tool for Medical Applications." In Nanoelectronics, Circuits and Communication Systems, 325–45. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-7486-3_31.
Full textAhmed, Iftikhar, Eng Huat Khoo, and Erping Li. "Time Domain Modeling and Simulation from Nanoelectronics to Nanophotonics." In Computational Electromagnetics—Retrospective and Outlook, 185–223. Singapore: Springer Singapore, 2014. http://dx.doi.org/10.1007/978-981-287-095-7_8.
Full textMurali Krishna, K., and M. Ganesh Madhan. "Numerical Simulation of High-Temperature VCSEL Operation and Its Impact on Digital Optical Link Performance." In Nanoelectronics, Circuits and Communication Systems, 337–52. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-0776-8_31.
Full textNguyen, Huu-Nha, Damien Querlioz, Arnaud Bournel, Sylvie Retailleau, and Philippe Dollfus. "Ohmic and Schottky Contact CNTFET: Transport Properties and Device Performance Using Semi-classical and Quantum Particle Simulation." In Semiconductor-On-Insulator Materials for Nanoelectronics Applications, 215–35. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-15868-1_12.
Full textConference papers on the topic "Simulation in nanoelectronics"
Morris, James E. "Nanotechnology laboratory and nanoelectronics simulation courses." In 2015 IEEE Nanotechnology Materials and Devices Conference (NMDC). IEEE, 2015. http://dx.doi.org/10.1109/nmdc.2015.7439275.
Full text"Session 03-A nanoelectronics and interfaces." In 2010 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010). IEEE, 2010. http://dx.doi.org/10.1109/sispad.2010.5604582.
Full textShakhnov, Vadim A., Lyudmila A. Zinchenko, and Elena V. Rezchikova. "Modeling and simulation of nanoelectronics devices in cognitive nanoinformatics." In The International Conference on Micro- and Nano-Electronics 2014, edited by Alexander A. Orlikovsky. SPIE, 2014. http://dx.doi.org/10.1117/12.2179168.
Full textWang, Hsin-Ping, Kun-Tong Tsai, Kun-Yu Lai, Yi-Ruei Lin, Yuh-Lin Wang, and Jr-Hau He. "Simulation and Experiment of Light Trapping Ability of Periodic Si Nanowires." In Nanophotonics, Nanoelectronics and Nanosensor. Washington, D.C.: OSA, 2013. http://dx.doi.org/10.1364/n3.2013.nsa3a.51.
Full textBarinov, A. D., A. I. Popov, and A. A. Makarov. "Property control methods of diamond-like silicon-carbon films for micro- and nanoelectronics." In THE EUROPEAN MODELING AND SIMULATION SYMPOSIUM. CAL-TEK srl, 2019. http://dx.doi.org/10.46354/i3m.2019.emss.008.
Full textZhao, Yiju, Youngki Yoon, and Lan Wei. "A Multi-Level Simulation Scheme for 2D Material-Based Nanoelectronics." In 2020 IEEE 20th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2020. http://dx.doi.org/10.1109/nano47656.2020.9183482.
Full textValin, R., N. Seoane, M. Aldegunde, and A. Garcia-Loureiro. "The MOSFET Virtual Organisation: Grid Computing for Simulation in Nanoelectronics." In 2009 5th IEEE International Conference on e-Science (e-Science). IEEE, 2009. http://dx.doi.org/10.1109/e-science.2009.45.
Full textTsagarakis, MS, and JP Xanthakis. "Simulation of a Vacuum Transistor." In 2018 31st International Vacuum Nanoelectronics Conference (IVNC). IEEE, 2018. http://dx.doi.org/10.1109/ivnc.2018.8520204.
Full textSchenk, A., and M. Luisier. "Three-dimensional quantum simulation of silicon nanowires." In 2008 IEEE Silicon Nanoelectronics Workshop (SNW). IEEE, 2008. http://dx.doi.org/10.1109/snw.2008.5418465.
Full textIlatikhameneh, Hesameddin, Bozidar Novakovic, Yaohua Tan, Mehdi Salmani-Jelodar, Tillmann Kubis, Michael Povolotskyi, Rajib Rahman, and Gerhard Klimeck. "Atomistic simulation of steep subthreshold slope Bi-layer MoS2 transistors." In 2014 Silicon Nanoelectronics Workshop (SNW). IEEE, 2014. http://dx.doi.org/10.1109/snw.2014.7348606.
Full textReports on the topic "Simulation in nanoelectronics"
Waitz, Anthony, Jerzy Bernholc, and Kurt Stokbro. Tools for Modeling & Simulation of Molecular and Nanoelectronics Devices. Fort Belvoir, VA: Defense Technical Information Center, June 2012. http://dx.doi.org/10.21236/ada577319.
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