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Journal articles on the topic 'Sputtering thin films'

Author: Grafiati
Published: 3 June 2025
Last updated: 31 July 2025

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1

Leong, Marcus Chiang Mun, Fabian Chiang Mun Chun, Jae Lee Kai Wei, et al. "Investigating the Thermoelectric and Structural Properties of Bismuth Telluride Thin Films for Harvesting Energy from Waste Heat." Solid State Phenomena 185 (February 2012): 77–80. http://dx.doi.org/10.4028/www.scientific.net/ssp.185.77.

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Recently, thermoelectric thin films have been gaining attention as potential thermoelectric generators that can be used to power external devices. Such films can recover electrical energy from waste heat and are environmentally friendly. Micro fabrication of thin films is achieved by sputtering on silicon films. In this study, the sputtering of Bismuth Telluride (N-type, P-type) films was investigated. Research has verified the efficiency of Bismuth Telluride films, but little is known about how the sputtering process affects the film's quality. Thus, the focus of this study explores how sputt
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2

Ji, Xiao Lin, Hai Dong Ju, Tao Yu Zou, et al. "Effects of Sputtering Pressure on Cu3N Thin Films by Reactive Radio Frequency Magnetron Sputtering." Advanced Materials Research 1105 (May 2015): 74–77. http://dx.doi.org/10.4028/www.scientific.net/amr.1105.74.

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Copper nitride thin films were prepared by reactive radio frequency magnetron sputtering at different sputtering pressures with fixed nitrogen to argon ratio. The influences of sputtering pressure on the structure, optical band gap, and surface morphology of films were investigated. The results show that the preferential orientation of polycrystalline Cu3N thin films changes from [111] to [100] when the sputtering pressure increases. Meanwhile, the optical band gap (Eg) of Cu3N thin films increases with the sputtering pressure. The surface morphology of Cu3N thin film deposited at high sputter
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3

Zi, Xing Fa, Rui Ming Liu, Qing Ye, and Xin Zhu Shu. "Structure and Optical Property of Cu2O:N Thin Film Deposited by Reactive Pulse Magnetron Sputtering." Advanced Materials Research 951 (May 2014): 104–8. http://dx.doi.org/10.4028/www.scientific.net/amr.951.104.

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N-doped Cu2O (Cu2O:N) thin films were deposited on glass substrate by reactive pulse magnetron sputtering method using Cu target. Crystalline phases of thin films were controlled by adjusting N2/ O2flow rate ratio and sputtering power precisely during the sputtering process, and the single phase of Cu2O(111) thin films were obtained at room temperature. The thin films deposited at different sputtering powers were characteristics of 2D growth and the root mean square (RMS) of surface roughness of thin films gradually increased with the increasing of sputtering power. The optical band gap (Eg) o
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4

Lu, Xiao Juan, and Duo Wang Fan. "Study of ITO Thin Film Deposited by RF Magnetron Sputter at Low Temperature." Advanced Materials Research 160-162 (November 2010): 1193–98. http://dx.doi.org/10.4028/www.scientific.net/amr.160-162.1193.

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ITO thin films used in PTCDA/Si detector should be made at low temperature for low temperature resistance of substrate. ITO thin films were deposited at low temperature by RF magnetron sputtering. Properties of ITO thin films such as conductivity and transmission measured by 4 point probe and UV spectral photometry respectively. The results show that the sputtering pressure is an important parameter in the deposition of indium tin oxide（ITO） thin films, which affects the properties of ITO films. The optimized parameter for preparation of ITO thin films at low temperature are sputtering pressur
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5

Jouan, Pierre Yves, Arnaud Tricoteaux, and Nicolas Horny. "Elaboration of nitride thin films by reactive sputtering." Rem: Revista Escola de Minas 59, no. 2 (2006): 225–32. http://dx.doi.org/10.1590/s0370-44672006000200013.

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The aim of this paper is first a better understanding of DC reactive magnetron sputtering and its implications, such as the hysteresis effect and the process instability. In a second part, this article is devoted to an example of specific application: Aluminium Nitride. AlN thin films have been deposited by reactive triode sputtering. We have studied the effect of the nitrogen contents in the discharge and the RF bias voltage on the growth of AlN films on Si(100) deposited by triode sputtering. Stoichiometry and crystal orientation of AlN films have been characterized by means of Fourier-trans
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6

Li, Ya Dan, Zhuang Hao Zheng, Ping Fan, Jing Ting Luo, Guang Xing Liang, and Bao Xiu Huang. "Thermoelectric Characterization of Ti and In Double-Doped Cobalt Antimony Thin Films." Materials Science Forum 847 (March 2016): 143–47. http://dx.doi.org/10.4028/www.scientific.net/msf.847.143.

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CoSb3 thermoelectric thin films were prepared on polyimide flexible substrate by radio frequency (RF) magnetron sputtering technology using a cobalt antimony alloy target. Ti and In were added into CoSb3 thin films by co-sputtering. The influence of Ti and In on the thermoelectric properties of CoSb3 thin films was investigated. X-ray diffraction result shows that the major diffraction peaks of all the thin films match the standard peaks related to the CoSb3 phase. The sample has best thermoelectric properties when the Ti sputtering time was 1min and In sputtering time was 30 seconds.
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7

Meng, Ling Ling, Xin Min Huang, and Qu Fu Wei. "Characteristics of Silver Films Deposited on the Surface of PET Fabric." Advanced Materials Research 239-242 (May 2011): 2356–60. http://dx.doi.org/10.4028/www.scientific.net/amr.239-242.2356.

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PET(polyester) plain woven fabric deposited with nano-structured silver thin film was prepared by RF (radio frequency) magnetron sputtering at room temperature. The effect of different sputtering technical parameters on the morphology and particle diameters of the nano-structured silver thin film was characterized by AFM(atomic force microscope)and the conductivities of silver thin films were also analyzed under different sputtering technical parameters. The results indicated that the nanoparticles size of sliver thin films increased with higher sputtering power, the conductivity of sliver thi
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8

Mihill, EG. "Thin films sputtering and evaporation." Vacuum 38, no. 8-10 (1988): 962. http://dx.doi.org/10.1016/0042-207x(88)90550-7.

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9

Birkholz, M., D. Lichtenberger, C. Höpfner, and S. Fiechter. "Sputtering of thin pyrite films." Solar Energy Materials and Solar Cells 27, no. 3 (1992): 243–51. http://dx.doi.org/10.1016/0927-0248(92)90086-5.

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10

Kim, Sara, Yong-Seok Lee, and Nam-Hoon Kim. "Homogeneity- and Stoichiometry-Induced Electrical and Optical Properties of Cu-Se Thin Films by RF Sputtering Power." Materials 16, no. 18 (2023): 6087. http://dx.doi.org/10.3390/ma16186087.

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P-type Cu-Se thin films were deposited on glass substrates at room temperature using radio frequency magnetron sputtering by a single multi-component CuSe2 target. When using a multi-component target, the impact of the sputtering power on the homogeneity and stoichiometry within the thin films should be investigated in the depth direction to demonstrate a secondary effect on the electrical and optical properties of the thin films. Systematic characterization of the Cu-Se thin films, including the morphology, microstructure, chemical composition, and depth-directional chemical bonding state and
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11

Mustapha, K.A. "Structural Characterization of RF-Sputtered CZTS Thin Films." International Journal of Advances in Scientific Research and Engineering (ijasre) 5, no. 9 (2019): 149–55. https://doi.org/10.31695/IJASRE.2019.33481.

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<em>Polycrystalline CZTS thin films of thickness 45nm, 90nm, 140nm and 180nm have been grown on the corning glass substrate by RF-magnetron sputtering at a substrate temperature of 100oC using a quaternary target. Structural characteristics of the grown thin films have been investigated using X-ray diffractometer (XRD). Detailed analysis of the XRD data has shown that the grown CZTS thin films have kesterite structure with preferred orientation along (112) plane which was observed to become stronger with an increase in film thickness, especially in the annealed samples. All the peaks observed
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12

Othman, Nur Afiqah, Nafarizal Nayan, Mohd Kamarulzaki, et al. "Effects of sputtering pressure on the growth of AlGaN thin films using Co-sputtering technique." Journal of Materials Science and Applied Energy 13, no. 1 (2023): 251506. http://dx.doi.org/10.55674/jmsae.v13i1.251506.

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Aluminium gallium nitride (AlGaN) thin films provide promise for a variety of electronic devices due to their wide energy bandgap, which ranges from 3.11 – 6.40 eV. Here, a co-sputtering approach utilising the RF and HiPIMS power supply of magnetron sputtering is used to deposit the AlGaN thin films. To examine their impact on the structural characteristics and morphology of the thin films, the AlGaN thin films were deposited under various sputtering pressures using the co-sputtering technique. Following that, the films were examined using X-ray diffraction (XRD), atomic force microscopy (AFM)
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13

Dahal, Yam Prasad, Bingfu Gu, Zhenping Su, and Sansheng Wang. "Investigating the Effect of Sputtering Particle Energy on the Crystal Orientation and Microstructure of NbN Thin Films." Coatings 15, no. 4 (2025): 460. https://doi.org/10.3390/coatings15040460.

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Niobium nitride (NbN) thin films are crucial materials for various applications, including superconductivity and hard coatings. However, precisely controlling their microstructure and crystal orientation during synthesis remains a challenge. This study addresses this gap by systematically investigating the effect of sputtering particle energy on NbN film properties. This research aims to elucidate the relationship between sputtering particle energy and the resulting microstructure and crystal structure of NbN thin films synthesized by reactive magnetron sputtering. NbN thin films were deposite
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14

NOIKAEW, Busarin, Laksana WANGMOOKLANG, Saisamorn NIYOMSOAN, and Siriporn LARPKIATTAWORN. "Preparation of transparent alumina thin films deposited by RF magnetron sputtering." Journal of Metals, Materials and Minerals 31, no. 2 (2021): 96–103. http://dx.doi.org/10.55713/jmmm.v31i2.1066.

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Alumina (Al2O3) thin films were prepared by RF magnetron sputtering technique using Al2O3 ceramic target. Effects of sputtering powers and oxygen gas mixtures were investigated and the optimized coating condition was applied on semi-precious gemstones. RF sputtering powers were varied to optimize the transparency of the films. Besides, the oxygen gas mixtures were also studied at the optimized sputtering power with a constant sputtering pressure. Optical and physical properties of the thin films were investigated using UV-Vis Spectrophotometer, FESEM, XRF, GIXRD, XRR including a microscratch t
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15

Wang, Hai Bo, Jin Yong Xu, and Wei Cai. "Surface Characteristics of Ni-Mn-Fe-Ga Sputtered Thin Films." Advanced Materials Research 194-196 (February 2011): 2290–95. http://dx.doi.org/10.4028/www.scientific.net/amr.194-196.2290.

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The Ni-Mn-Fe-Ga shape memory alloy thin film was deposited onto silicon substrates by using radio-frequency (R.F.) magnetron sputtering technique. Chemical composition, surface morphology and crystallographic structure were systematically investigated by means of X-ray fluorescence (XRF), atomic force microscope (AFM) and X-ray diffraction (XRD). The experimental results show that the magnetron sputtering process has remarkable influence on the chemical compositions and surface characteristics of Ni-Mn-Fe-Ga alloy thin films. As the sputtering power ranging between 245W and 405W, Ni content of
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16

Li, Zhi-Yue, Sheng-Chi Chen, Qiu-Hong Huo, et al. "Influence of Sputtering Power on the Electrical Properties of In-Sn-Zn Oxide Thin Films Deposited by High Power Impulse Magnetron Sputtering." Coatings 9, no. 11 (2019): 715. http://dx.doi.org/10.3390/coatings9110715.

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In-Sn-Zn oxide (ITZO) thin films have been studied as a potential material in flat panel displays due to their high carrier concentration and high mobility. In the current work, ITZO thin films were deposited on glass substrates by high-power impulse magnetron sputtering (HiPIMS) at room temperature. The influence of the sputtering power on the microstructures and electrical performance of ITZO thin films was investigated. The results show that ITZO thin films prepared by HiPIMS were dense and smooth. There were slight variations in the composition of ITZO thin films deposited at different spu
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17

Shi, Ming Ji, and Lan Li Chen. "Fabrication of High Quality Textured ZnO:Al Thin Films." Solid State Phenomena 181-182 (November 2011): 447–50. http://dx.doi.org/10.4028/www.scientific.net/ssp.181-182.447.

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High quality textured ZnO:Al electrode can improve the energy conversion efficiency of silicon based thin film solar cells. Two groups of ZnO:Al films were fabricated under different sputtering powers. Different textured surfaces were got when corroding ZnO:Al films with diluted HCl solutions of different concentration. The transmission spectrum and square resistance of the samples were measured. The dependence of sputtering power and corrosion time on the resistivity, transmittance and surface texture of the samples were studied. The results showed that the density of the ZnO:Al film was main
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18

Zhang, T. J., S. Z. Li, B. S. Zhang, W. H. Huang, and R. K. Pan. "Effect of Deposition Parameters on Crystallization of RF Magnetron Sputtered BST Thin Films." Key Engineering Materials 336-338 (April 2007): 79–82. http://dx.doi.org/10.4028/www.scientific.net/kem.336-338.79.

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Ba0.65Sr0.35TiO3 (BST) thin films on p-silicon substrates were deposited by radio frequency magnetron sputtering. The effects of the deposition parameters on the crystallization and microstructure of BST thin films were investigated by X-ray diffraction and filed emission electron microscopy, respectively. The crystallization behavior of these films was apparently affected by the substrate temperature, annealing temperature and sputtering pressure. The improved crystallization can be observed for BST thin films that deposited at higher temperature. The dominant X-ray diffraction peaks became s
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19

Ding, Ai-Li, Wei-Gen Luo, P. S. Qiu, J. W. Feng, and R. T. Zhang. "Study on preparing PLT(28) thin film and its electro-optic effect." Journal of Materials Research 13, no. 5 (1998): 1266–70. http://dx.doi.org/10.1557/jmr.1998.0181.

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PLT(28) thin films deposited on glass substrates were studied by two sputtering processes. One is an in situ magnetron sputtering and the other is a low-temperature magnetron sputtering. The sintered PLT ceramic powders are used as a sputtering target for both processes. The influences of sputtering and annealing conditions on structure and crystallinity of the films were investigated. The electro-optic (E-O) properties of PLT(28) thin films prepared by the two processes were determined by a technique according to Faraday effect. The researches showed the E-O properties were strongly affected
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20

Wang, Junbao, Dianguo Ma, Lu Wang, et al. "Thickness uniformity, electrical properties, and stress of sputtered TiN thin films." Journal of Physics: Conference Series 2825, no. 1 (2024): 012034. http://dx.doi.org/10.1088/1742-6596/2825/1/012034.

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Abstract The development of microelectronic and semiconductor devices has put forward higher requirements for the growth quality of TiN thin films. In this paper, TiN thin films were grown using magnetron sputtering technology on 50°C monocrystalline silicon substrates. The effects of preparation factors (sputtering power and argon/nitrogen ratio) on TiN films were studied by X-ray diffractometer, X-ray fluorescence spectrometer, four-probe instrument, and stress measuring instrument. The experimental results show that the sputtering power and argon/nitrogen flow ratio have important effects o
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21

Schneider, K. "Structural And Optical Properties Of VOx Thin Films." Archives of Metallurgy and Materials 60, no. 2 (2015): 957–61. http://dx.doi.org/10.1515/amm-2015-0238.

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Abstract VOx thin films were deposited on Corning glass, fused silica and Ti foils by means of rf reactive sputtering from a metallic vanadium target. Argon-oxygen gas mixtures of different compositions controlled by the flow rates were used for sputtering. Influence of the oxygen partial pressure in the sputtering chamber on the structural and optical properties of thin films has been investigated. Structural properties of as-sputtered thin films were studied by X-ray diffraction at glancing incidence, GIXD. Optical transmittance and reflectance spectra were recordedwith a Lambda 19 Perkin-El
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22

GAO, SHANG, SHUYUN WANG, JIE LIAN, PING LI, and XIAO WANG. "EFFECTS OF TEMPERATURE AND SPUTTERING POWER ON THE MORPHOLOGY AND OPTICAL CONSTANTS OF THIN TANTALUM FILMS." Surface Review and Letters 19, no. 04 (2012): 1250039. http://dx.doi.org/10.1142/s0218625x12500394.

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A set of thin tantalum films was prepared by direct current (DC) magnetron sputtering using different substrate temperatures and sputtering power. In order to identify the optimal condition for hillock free thin tantalum (Ta) film deposition, AFM was employed to measure surface morphology of the Ta films and to research the effect of substrate temperatures and sputtering power on the films surface. The relationship between optical constants and film stress of thin Ta films was also investigated. The comparison of AFM results showed that thin Ta films deposited at 500 K with a sputtering power
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23

Wall, Jacob M., and Feng Yan. "Sputtering Process of ScxAl1−xN Thin Films for Ferroelectric Applications." Coatings 13, no. 1 (2022): 54. http://dx.doi.org/10.3390/coatings13010054.

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Several key sputtering parameters for the deposition of ScxAl1−xN such as target design, sputtering atmosphere, sputtering power, and substrate temperature are reviewed in detail. These parameters serve a crucial role in the ability to deposit satisfactory films, achieve the desired stoichiometry, and meet the required film thickness. Additionally, these qualities directly impact the degree of c-axis orientation, grain size, and surface roughness of the deposited films. It is systematically shown that the electric properties of ScxAl1−xN are dependent on the crystal quality of the film. Althou
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24

Singh, Jitendra Pal, Manish Kumar, Weon Cheol Lim, et al. "MgO Thin Film Growth on Si(001) by Radio-Frequency Sputtering Method." Journal of Nanoscience and Nanotechnology 20, no. 12 (2020): 7530–34. http://dx.doi.org/10.1166/jnn.2020.18613.

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Herein, sputtering duration and annealing temperature effects on the structure and local electronic structure of MgO thin films were studied using synchrotron radiation based X-ray diffraction and X-ray absorption spectroscopic investigations. These films were grown at substrate temperature of 350 °C by varying sputtering duration from 25 min to 324 min in radio frequency (RF) sputtering method followed by post-deposition annealing at 400, 600 and 700 °C for 3 h. These films were amorphous upto certain sputtering durations, typically upto 144 min and attains crystallization thereafter. This ki
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25

Zhou, Zhen, and Jing He. "Study on Crystallinity and Magnetic Properties of NiCuZn Ferrite Films Deposited by RF Sputtering." Journal of Physics: Conference Series 2706, no. 1 (2024): 012070. http://dx.doi.org/10.1088/1742-6596/2706/1/012070.

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Abstract Nickel-zinc ferrite proves to be the top-performing material in terms of soft magnetic features for high-frequency applications. The purpose of this study is to explore the impact of various factors such as sputtering pressure, substrate temperature, sputtering power, and sputtering gas, on the magnetic and structural properties of NiCuZn ferrite thin films. In this research, radio-frequency magnetron sputtering of NiCuZn ferrite thin films on silicon substrates was used to investigate the matter. The study demonstrates that reducing sputtering pressure enhances the crystallization of
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26

LI, WENHAO. "SYNTHESIS OF CUPROUS OXIDE THIN FILMS BY RF-MAGNETRON SPUTTERING." Surface Review and Letters 25, no. 02 (2018): 1850051. http://dx.doi.org/10.1142/s0218625x18500518.

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Cuprous oxide (Cu2O) thin films were produced from metallic Cu targets on [Formula: see text]-Al2O3 (000[Formula: see text]) substrate by radio frequency magnetron sputtering technology. Three batches of samples were deposited under various sputtering parameters by modulating substrate temperature, gas flow and sputtering power, respectively. The samples were characterized by X-ray diffraction and field-emission scanning electron microscopy. Through the experiment, the influences of the sputtering conditions were systematically investigated. It could be inferred that the crystallization extent
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27

Wang, Qi, Zhi Jian Peng, Yang Wang, and Xiu Li Fu. "Deposition and Electrical Resistivity of Oxygen-Deficient Tin Oxide Films Prepared by RF Magnetron Sputtering at Different Powers." Solid State Phenomena 281 (August 2018): 504–9. http://dx.doi.org/10.4028/www.scientific.net/ssp.281.504.

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A series of oxygen-deficient tin oxide thin films were deposited by radio frequency magnetron sputtering a sintered tin oxide ceramic target under pure argon atmosphere at different sputtering powers (80-160 w) under the based pressure of no more than 2.0×10-4 Pa, sputtering pressure of 2.0 Pa and deposition time of 20 min. It was revealed that all the as-deposited films were oxygen-deficient tin oxide films, and the main defect in films was oxygen vacancy (VO), whose concentration gradually decreased with the increase of sputtering power. The films prepared at a power of no more than 120 w we
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28

Sundaresh, Sreeram, Akash Hari Bharath, and Kalpathy B. Sundaram. "Effect of Cu2O Sputtering Power Variation on the Characteristics of Radio Frequency Sputtered p-Type Delafossite CuCrO2 Thin Films." Coatings 13, no. 2 (2023): 395. http://dx.doi.org/10.3390/coatings13020395.

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For the first time, the effect of Cuprous Oxide (Cu2O) sputtering power variation on the radio frequency sputtered Copper Chromium Oxide (CuCrO2) thin films was studied. In this work, the sputtering power of Cr2O3 was held constant at 200 W while the sputtering power of the Cu2O target was varied from 10 to 100 W. The films were subsequently annealed at 650 °C in N2 ambiance. The effects of Cu2O sputtering power variation on the structural, optical, and electrical properties of the films have been reported in this work. X-ray diffractometer (XRD) study revealed that the single-phase delafossit
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29

Buranawong, Adisorn, Nirun Witit-Anun, and Surasing Chaiyakun. "Structure and Microstructure of Binary Nitride TiN Thin Films Deposited by DC Reactive Sputtering." Advanced Materials Research 931-932 (May 2014): 147–51. http://dx.doi.org/10.4028/www.scientific.net/amr.931-932.147.

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Titanium nitride (TiN) thin films were deposited on to unheated silicon (100) and stainless steel substrates by home-made direct current (DC) reactive magnetron sputtering method at a deposition of 60 min in an Ar-N2 gas mixture. The effects of sputtering power on structure and microstructure of these films have been studied. The films were analyzed by X-ray diffraction (XRD), Atomic Force Microscope (AFM) and Field-Emission Scanning Electron Microscope (FE-SEM). The films colors were influenced by sputtering parameter which altered from green purple to light gold and dark gold, respectively.
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Mukesh Kumar, Mukesh Kumar. "Studies of structural and optical properties of sputtered SiC thin films." Zastita Materijala 65, no. 2 (2024): 343–49. http://dx.doi.org/10.62638/zasmat1143.

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The present study explored the deposition of amorphous silicon carbide (a-SiC) thin films on Si (100) and glass substrates using RF-magnetron sputtering. The sputtering power is changed from 100 to 250 W to study its influence on the characteristics of a-SiC thin films. Raman spectroscopy reveals the formation of a-SiC as well as carbon clusters. The film deposited at 100 W clearly shows the presence of both transverse optical (TO) and longitudinal optical (LO) phonon modes. The average roughness of the a-SiC films found to follow an increasing trend with increase in the sputtering power. The
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31

Lin, Jian Guang, Wei Xiang Weng, Wei Hui Huang, and Hai Fang Zhou. "Preparation and Conductive Properties of Ag Thin Film by DC Magnetron Sputtering Method." Applied Mechanics and Materials 217-219 (November 2012): 1068–72. http://dx.doi.org/10.4028/www.scientific.net/amm.217-219.1068.

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Ag thin films were prepared on the float-glass substrate by DC magnetron sputtering method. The relationship of surface morphology/electrical properties with technical conditions was investigated. The experimental results showed that sputtering power, sputtering pressure and substrate temperature had effects on the morphology and electrical properties of Ag thin films. The optimum parameters were obtained with sputtering power of 100 W，sputtering pressure of 0.4 Pa and substrate temperature of 130 °C. Under the optimum parameters, the deposited Ag thin film was smooth and its resistivity was a
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32

YAN, JIANWU, and JICHENG ZHOU. "THE OXIDATION AND THE ELECTRICAL PROPERTIES OF Ni–Cr THIN FILM AFTER RAPID THERMAL ANNEALING." International Journal of Modern Physics B 21, no. 26 (2007): 4561–74. http://dx.doi.org/10.1142/s0217979207037934.

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By controlling the sputtering power, rotational speed of the substrate and sputtering time, Ni – Cr thin films with appropriate composition were fabricated by double-target magnetron co-sputtering techniques. The homogeneity and oxidation of Ni – Cr thin film has been studied by Auger electron spectroscopy (AES). The structures of Ni – Cr thin films were determined by an X-ray diffractometer (XRD). The oxidation and the resistance stability of the Ni – Cr thin film after rapid thermal process (RTP) have been studied. The relations between TCR and RTP techniques of Ni – Cr thin films were discu
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33

Luo, Zhi Hong, Jin Feng Leng, Wen Shuang He, and De Jiang Hu. "Effect of Sputtering Power on Photocatalytic Activity of Thin TiO2 Films." Materials Science Forum 814 (March 2015): 173–77. http://dx.doi.org/10.4028/www.scientific.net/msf.814.173.

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TiO2 thin films with outstanding photocatalysis can potentially be used for photocatalysis device in the field of environmental protection. TiO2 thin film (99.99%) was fabricated successfully by power metallurgy. The effect of sputtering power on TiO2 thin films by radio frequency magnetron sputtering was investigated. The results show that the higher sputtering power is beneficial for the growth of Rutile structure with superior photocatalysis. With the increasing of sputtering power, the rate of methyl orange degradation increases under UV light irradiation. The degradation rate of TiO2 thin
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34

Chen, Tao, and Duo Shu Wang. "Study on Optical Properties of Silicon Oxycarbide Thin Films Prepared by RF Magnetron Sputtering." Advanced Materials Research 482-484 (February 2012): 1307–12. http://dx.doi.org/10.4028/www.scientific.net/amr.482-484.1307.

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Silicon oxycarbide（SiCO）thin films is a kind of glassy compound materials, which possess many potential excellent properties such as thermal stability, wide energy band, high refractive index and high hardness, and have many potential applications in space. The preparation processes of SiCO thin films by RF magnetron sputtering with different substrate temperature, working pressure and sputtering power were studied. And various surface analysis methods were used to characterize the optical properties of SiCO thin films. The dependence of the properties on the process parameters was also studie
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35

Mustafa, M. K., U. Majeed, and Y. Iqbal. "Effect on Silicon Nitride thin Films Properties at Various Powers of RF Magnetron Sputtering." International Journal of Engineering & Technology 7, no. 4.30 (2018): 39. http://dx.doi.org/10.14419/ijet.v7i4.30.22000.

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Silicon nitride thin films have numerous applications in microelectronics and optoelectronics fields due to their unique properties. In this work, silicon nitride thin films were produced using radio frequency (R.F.) magnetron sputtering technique at various sputtering powers. The prepared thin films were characterized with XRD, FE-SEM, FTIR, surface profiler, AFM and spectral reflectance techniques for structure, surface morphology, chemical bonding information, growth rate, surface roughness and optical properties. The results showed that silicon nitride thin films were amorphous in nature.
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Lai, Lei, Xiao Jia Wang, and Jun Jie Hao. "The Study of SiC Thin Films Produced by Magnetron Sputtering." Key Engineering Materials 609-610 (April 2014): 82–87. http://dx.doi.org/10.4028/www.scientific.net/kem.609-610.82.

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In this paper, SiC films were deposited on the surface of 316L stainless steel by magnetron sputtering with sintering SiC target to improve its wear resistance. The structure and morphologies of the SiC films were characterized by XRD and SEM. The impacts of sputtering way, deposition time, and substrate temperature on the deposition rate and mechanical properties of SiC films were further investigated by the performance parameters of hardness, elastic modulus, friction and wear properties, coating adhesion, etc. The results show that coating adhesion is higher when the films are deposited by
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Saidi, Saidi, Margaret E. Samiji, and Nuru R. Mlyuka. "Effect of Substrate Temperature and Deposition Power on the Surface Morphology and Optical Properties of ZnO:Mg Thin Films Deposited by DC Magnetron Sputtering." Tanzania Journal of Science 49, no. 5 (2024): 1038–47. http://dx.doi.org/10.4314/tjs.v49i5.9.

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Magnesium doped zinc oxide (ZnO:Mg) thin films were deposited on soda lime glass slides by DC magnetron sputtering method. Atomic force microscope (AFM), and UV/VIS spectrophotometer were used to investigate the effect of sputtering power and substrate temperature on the surface morphology and optical properties of ZnO:Mg thin films. AFM images revealed that sputtering power and deposition temperature have significant influence on surface morphology of the ZnO:Mg thin films. For all sputtering powers and substrate temperatures investigated, ZnO:Mg films had peak transmittance above 85%. Sample
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Barajas-Valdes, Ulises, and Oscar Marcelo Suárez. "Morphological and Structural Characterization of Magnetron-Sputtered Aluminum and Aluminum-Boron Thin Films." Crystals 11, no. 5 (2021): 492. http://dx.doi.org/10.3390/cryst11050492.

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In microelectronic mechanical systems applications, sputtered aluminum thin films may have large roughness, which promotes the optical degradation and electromigration. This challenge motivated the present research, where magnetron sputtering equipped by radio frequency allowed for preparing aluminum and aluminum-boron thin films. This study evaluated the effect of the sputtering power and the substrate type (silicon wafer and glass slides) on the deposited films. The film’s morphology and structure were characterized via an atomic force microscope and X-ray diffraction. Pure aluminum films’ t
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Widyastuti, Endrika, Jue-Liang Hsu, and Ying-Chieh Lee. "Insight on Photocatalytic and Photoinduced Antimicrobial Properties of ZnO Thin Films Deposited by HiPIMS through Thermal Oxidation." Nanomaterials 12, no. 3 (2022): 463. http://dx.doi.org/10.3390/nano12030463.

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Zinc oxide thin films have been developed through thermal oxidation of Zinc thin films grown by high impulse power magnetron sputtering (HiPIMS). The influence of various sputtering power on thin film structural, morphological, photocatalytic, and antimicrobial properties was investigated. X-ray diffraction (XRD) analysis confirmed that the crystalline phase of ZnO thin films consists of a hexagonal wurtzite structure. Increasing the sputtering power will lead to intrinsic stress on thin films that promote whisker formation. In this study, whiskers were successfully developed on the thin films
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Fribourg-Blanc, E., E. Cattan, D. Remiens, M. Dupont, and D. Osmont. "rf-sputtering of PMNT thin films." Le Journal de Physique IV 11, PR11 (2001): Pr11–145—Pr11–149. http://dx.doi.org/10.1051/jp4:20011123.

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Yin, Chen Yue, Li Na Xu, and Ning Gu. "Tunable Nanostructures and Sers Activities of Sputtered Thin Silver Films." Applied Mechanics and Materials 598 (July 2014): 78–81. http://dx.doi.org/10.4028/www.scientific.net/amm.598.78.

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A series of silver films were fabricated on silicon by magnetron sputtering method, which enables us to finely tune silver nanostructures by adjusting sputtering process. We studied the evolutional nanostructures obtained from sputtering time, and investigated their corresponding SERS effects. Results show that nanogroove-structured thin silver films have strongest Raman signal enhancement. This work provides a very fast, simple and reproducible way to fabrication of SERS-active substrate with tunable nanostructures.
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ZHOU, J. C., L. LI, L. Y. RONG, B. X. ZHAO, Y. M. CHEN, and F. LI. "ELECTRICAL AND OPTICAL PROPERTIES OF ZnO THIN FILMS PREPARED BY R.F. MAGNETRON SPUTTERING." International Journal of Modern Physics B 25, no. 20 (2011): 2741–49. http://dx.doi.org/10.1142/s0217979211100357.

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High transparency and conductivity of transparent conducting oxide thin film are very important for improving the efficiency of solar cells. ZnO thin film is a better candidate for transparent conductive layer of solar cell. N-type ZnO thin films were prepared by radio-frequency magnetron sputtering on glass substrates. ZnO thin films underwent annealing treatment after deposition. The influence of the sputtering power on the surface morphology, the electrical and optical properties were studied by AFM, XRD, UV2450 and HMS-3000. The experimental results indicate that the crystal quality of ZnO
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Wang, Xin, Sveinn Olafsson, Lynnette D. Madsen, et al. "Growth and Characterization of Na0.5K0.5NbO3 Thin Films on Polycrystalline Pt80Ir20 Substrates." Journal of Materials Research 17, no. 5 (2002): 1183–91. http://dx.doi.org/10.1557/jmr.2002.0175.

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Na0.5K0.5NbO3 thin films have been deposited onto textured polycrystalline Pt80Ir20 substrates using radio frequency magnetron sputtering. Films were grown in off- and on-axis positions relative to the target at growth temperatures of 500–700 °C and sputtering pressures of 1–7 Pa. The deposited films were found to be textured, displaying a mixture of two orientations (001) and (101). Films grown on-axis showed a prefered (001) orientation, while the off-axis films had a (101) orientation. Scanning electron microscopy showed that the morphology of the films was dependent on the substrate positi
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Promros, N., and Boonchoat Paosawatyanyong. "Silver Thin Films Deposited by Compact Magnetron Sputtering System." Advanced Materials Research 93-94 (January 2010): 413–16. http://dx.doi.org/10.4028/www.scientific.net/amr.93-94.413.

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A compact dc magnetron sputtering system capable of silver thin films depositions was designed and constructed. The novel small footprint sputtering head with target diameter of 52 mm was constructed utilizing powerful neodymium alloy magnet. Silver metal was sputter-deposited under various powers. Plasma parameters were analyzed by using the sweeping-bias single langmuir probe. The electron temperatures of the plasma glow were constant at approximately 2 eV even with the increasing of input power whereas plasma density increases with the increasing of the input power. The X-ray diffraction an
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Silva, Daniela, Catarina S. Monteiro, Susana O. Silva, et al. "Sputtering Deposition of TiO2 Thin Film Coatings for Fiber Optic Sensors." Photonics 9, no. 5 (2022): 342. http://dx.doi.org/10.3390/photonics9050342.

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Thin films of titanium dioxide (TiO2) and titanium (Ti) were deposited onto glass and optical fiber supports through DC magnetron sputtering, and their transmission was characterized with regard to their use in optical fiber-based sensors. Deposition parameters such as oxygen partial pressure, working pressure, and sputtering power were optimized to attain films with a high reflectance. The films deposited on glass supports were characterized by UV-Vis spectroscopy, X-ray diffraction (XRD), and scanning electron microscopy (SEM). Regarding the deposition parameters, all three parameters were t
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Kamat, Hrishikesh, Xingwu Wang, James Parry, Yueling Qin, and Hao Zeng. "Synthesis and Characterization of Copper-Iron Nitride Thin Films." MRS Advances 1, no. 3 (2015): 203–8. http://dx.doi.org/10.1557/adv.2015.13.

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ABSTRACTIron nitride thin films have potential applications in the biomedicine and energy. The magnetic properties of these films can be tuned by incorporating copper nitride. In this study, iron copper nitride thin films have been fabricated by magnetron sputtering technique either by co-sputtering iron nitride and copper nitride or by layer stacking of the materials. The structure, morphology and magnetic properties of the films have been studied by scanning electron microscopy, x-ray diffraction, x-ray reflectivity and vibrating sample magnetometry.
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Lin, Qijing, Zelin Wang, Qingzhi Meng, Qi Mao, Dan Xian, and Bian Tian. "A Co-Sputtering Process Optimization for the Preparation of FeGaB Alloy Magnetostrictive Thin Films." Nanomaterials 13, no. 22 (2023): 2948. http://dx.doi.org/10.3390/nano13222948.

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A co-sputtering process for the deposition of Fe0.8Ga0.2B alloy magnetostrictive thin films is studied in this paper. The soft magnetic performance of Fe0.8Ga0.2B thin films is modulated by the direct-current (DC) sputtering power of an FeGa target and the radio-frequency (RF) sputtering power of a B target. Characterization results show that the prepared Fe0.8Ga0.2B films are amorphous with uniform thickness and low coercivity. With increasing FeGa DC sputtering power, coercivity raises, resulting from the enhancement of magnetism and grain growth. On the other hand, when the RF sputtering po
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Wu, Shen Jiang, Wei Shi, Jun Hong Su, and Wen Qi Wang. "A Study on the Process of ZnO Thin Films Prepared by Ion Beam Sputtering." Advanced Materials Research 233-235 (May 2011): 2399–402. http://dx.doi.org/10.4028/www.scientific.net/amr.233-235.2399.

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Based on the ion beam sputtering deposition technology, we adopted the reactive sputtering deposition method to accomplish the coating on the glass substrata with ZnO thin films. We used the four-factor and three-level L9(34) orthogonal experiment to obtain the best technological parameters of deposited ZnO thin films: discharge voltage 3.5KV, oxygen current capacity 8SCCM, the coil current 8A, the distance between target and substrata 140mm. The purity of the deposited ZnO thin film is 85.77%, and it has the good crystallization in orientation. The experimental results show that research and
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Zhao, Xiang Min. "Effects of the Sputtering Time of AlN Buffer Layer on the Quality of ZnO Thin Films." Advanced Materials Research 881-883 (January 2014): 1117–21. http://dx.doi.org/10.4028/www.scientific.net/amr.881-883.1117.

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ZnO thin films with different thickness (the sputtering time of AlN buffer layers was 0 min, 30 min,60 min, and 90 min, respectively) were prepared on Si substrates using radio frequency (RF) magnetron sputtering system.X-ray diffraction (XRD), atomic force microscope (AFM), Hall measurements setup (Hall) were used to analyze the structure, morphology and electrical properties of ZnO films.The results show that growth are still preferred (002) orientation of ZnO thin films with different sputtering time of AlN buffer layer,and for the better growth of ZnO films, the optimal sputtering time is
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Jayatissa, Ahalapitiya H., A. M. Soleimanpour, and Yue Hao. "Manufacturing of Multifunctional Nanocrystalline ZnO Thin Films." Advanced Materials Research 383-390 (November 2011): 4073–78. http://dx.doi.org/10.4028/www.scientific.net/amr.383-390.4073.

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Optical, surface and structural properties of ZnO thin films fabricated by reactive radio- frequency (rf) magnetron sputtering and sol-gel coating methods are comparatively investigated. The optical properties of films produced by both techniques have very similar characteristics, however; the surface morphology and degree of crystallinity have different behaviors. The nanostructure columnar zinc oxide thin films can be synthesized by sol-gel coating methods which can have numerous applications requiring larger surface area. Also, the process scalability and large-scale manufacturing of these
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