Relevant bibliographies by topics / Tunnel diodes

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Tunnel diodes'

Author: Grafiati
Published: 4 June 2021
Last updated: 25 July 2025

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Journal articles on the topic "Tunnel diodes"

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Калиновский, В. С., Е. В. Контрош, Г. В. Климко та ін. "Разработка и исследование туннельных p-i-n-диодов GaAs/AlGaAs для многопереходных преобразователей мощного лазерного излучения". Физика и техника полупроводников 54, № 3 (2020): 285. http://dx.doi.org/10.21883/ftp.2020.03.49034.9298.

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Fabrication of connecting tunnel diodes with high peak tunnel current density exceeding the short-circuit current density of photoactive p−n junctions is an important task in development of multi-junction III−V photovoltaic converters of high-power optical radiation. Based on the results of a numerical simulation of tunnel diode current−voltage characteristics, a method is suggested for raising the peak tunnel current density by connecting a thin undoped i-type layer with thickness of several nanometers between the degenerate layers of a tunnel diode. The method of molecular-beam epitaxy was u
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BERGER, P. R., G. GULYAMOV, M. G. DADAMIRZAEV, M. K. UKTAMOVA, and S. R. BOIDEDAEV. "Influence of Microwave and Magnetic Fields on the Electrophysical Parameters of a Tunnel Diode." Romanian Journal of Physics 69, no. 3-4 (2024): 609. http://dx.doi.org/10.59277/romjphys.2024.69.609.

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In this paper, we studied the effect of an electromagnetic field of an ultrahigh frequency on the I–V characteristics of tunnel diodes. The influence of thermionic current on the change in the ratio of the values of tunnel currents at depth and the peak formed in the tunnel diode as a result of a strong electromagnetic field and on the change in the ratio of the values of tunnel currents at the highest and lowest points without exposure to a strong electromagnetic field. The I–V characteristics of a tunnel diode under the action of a microwave field is determined based on the theory of Knott a
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Moraru, Daniel. "Challenges and Progress in the Fabrication of Silicon Nanowire Tunnel Diodes." International Journal of Electrical, Computer, and Biomedical Engineering 1, no. 1 (2023): 57–65. http://dx.doi.org/10.62146/ijecbe.v1i1.23.

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Tunnel (Esaki) diodes prepared in silicon (Si) nanowires could provide a unique platform to investigate band-to-band tunneling (BTBT) transport in nanoscale. However, the successful fabrication of these devices poses substantial challenges, related to controlling high doping concentrations, maintaining the abruptness of the pn junction, and minimizing roughness due to nanoscale patterning. This paper comprehensively addresses these challenges, suggesting potential strategies for optimization. Additionally, examples of nanoscale diodes fabricated so far in silicon-on-insulator (SOI) substrates
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Amine, Abdelaziz, Yamina Mir, and Mimoun Zazoui. "Modelling of Dual-Junction Solar Cells including Tunnel Junction." Advances in Condensed Matter Physics 2013 (2013): 1–5. http://dx.doi.org/10.1155/2013/546362.

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Monolithically stacked multijunction solar cells based on III–V semiconductors materials are the state-of-art of approach for high efficiency photovoltaic energy conversion, in particular for space applications. The individual subcells of the multi-junction structure are interconnected via tunnel diodes which must be optically transparent and connect the component cells with a minimum electrical resistance. The quality of these diodes determines the output performance of the solar cell. The purpose of this work is to contribute to the investigation of the tunnel electrical resistance of such a
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Day, D. J., Y. Chung, C. Webb, J. N. Eckstein, J. M. Xu, and M. Sweeny. "Heterostructurep‐njunction tunnel diodes." Applied Physics Letters 57, no. 11 (1990): 1140–42. http://dx.doi.org/10.1063/1.103515.

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Sweeny, Mark, and Jingming Xu. "Resonant interband tunnel diodes." Applied Physics Letters 54, no. 6 (1989): 546–48. http://dx.doi.org/10.1063/1.100926.

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LIU, QINGMIN, SURAJIT SUTAR, and ALAN SEABAUGH. "TUNNEL DIODE/TRANSISTOR DIFFERENTIAL COMPARATOR." International Journal of High Speed Electronics and Systems 14, no. 03 (2004): 640–45. http://dx.doi.org/10.1142/s0129156404002600.

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A new tunnel diode/transistor circuit topology is reported, which both increases speed and reduces power in differential comparators. This circuit topology is of special interest for use in direct digital synthesis applications. The circuit topology can be extended to provide performance improvements in high speed logic and signal processing applications. The circuits are designed based on InP/GaAsSb double heterojunction bipolar transistors and AlAs/InGaAs/AlAs resonant tunneling diodes. A self-aligned and scalable fabrication approach using nitride sidewalls and chemical mechanical polishing
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Marteau, Baptiste, Thibaut Desrues, Quentin Rafhay, Anne Kaminski, and Sébastien Dubois. "Passivating Silicon Tunnel Diode for Perovskite on Silicon Nip Tandem Solar Cells." Energies 16, no. 11 (2023): 4346. http://dx.doi.org/10.3390/en16114346.

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Silicon solar cells featuring tunnel oxide passivated contacts (TOPCon) benefit from high efficiencies and low production costs and are on the verge of emerging as the new photovoltaic market mainstream technology. Their association with Perovskite cells in 2-terminal tandem devices enables efficiency breakthroughs while maintaining low fabrication costs. However, it requires the design of a highly specific interface to ensure both optical and electrical continuities between subcells. Here, we evaluated the potential of tunnel diodes as an alternative to ITO thin films, the reference for such
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Bercha, Artem, Mikołaj Chlipała, Mateusz Hajdel, et al. "Photoluminescence and Photocurrent from InGaN/GaN Diodes with Quantum Wells of Different Widths and Polarities." Nanomaterials 15, no. 2 (2025): 112. https://doi.org/10.3390/nano15020112.

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We compare the optical properties of four pin diode samples differing by built-in field direction and width of the In0.17Ga0.83N quantum well in the active layer: two diodes with standard nip layer sequences and 2.6 and 15 nm well widths and two diodes with inverted pin layer ordering (due to the tunnel junction grown before the pin structure) also with 2.6 and 15 nm widths. We study photoluminescence and photocurrent in those samples (as a function of excitation power and applied voltage), revealing very different properties due to the interplay of built-in fields and screening by injected ca
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Thompson, P. E., K. D. Hobart, M. E. Twigg, et al. "Epitaxial Si-based tunnel diodes." Thin Solid Films 380, no. 1-2 (2000): 145–50. http://dx.doi.org/10.1016/s0040-6090(00)01490-5.

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Dissertations / Theses on the topic "Tunnel diodes"

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Wengler, Michael James Phillips Thomas G. Phillips Thomas G. "Heterodyne detection with superconducting tunnel diodes /." Diss., Pasadena, Calif. : California Institute of Technology, 1988. http://resolver.caltech.edu/CaltechETD:etd-02012007-084647.

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Jin, Niu. "Si-based quantum functional tunneling devices and their applications to logic and other future circuit topologies." Connect to this title online, 2004. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1092769809.

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Thesis (Ph. D.)--Ohio State University, 2004.<br>Title from first page of PDF file. Document formatted into pages; contains xxv, 201 p.; also includes graphics Includes bibliographical references (p. 188-201). Available online via OhioLINK's ETD Center
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Belhadj-Yahya, Chedly. "Evaluation of the quantum well tunneling diode and the quantum electron-wave interference diode as high speed devices." Diss., Georgia Institute of Technology, 1992. http://hdl.handle.net/1853/15348.

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Slovick, Brian Alan. "Infrared phased-array antenna-coupled tunnel diodes." Doctoral diss., University of Central Florida, 2011. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5049.

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Infrared (IR) dipole antenna-coupled metal-oxide-metal (MOM) tunnel diodes provide a unique detection mechanism that allows for determination of the polarization and wavelength of an optical field. By integrating the MOM diode into a phased-array antenna, the angle of arrival and degree of coherence of received IR radiation can be determined. The angular response characteristics of IR dipole antennas are determined by boundary conditions imposed by the surrounding dielectric or conductive environment on the radiated fields. To explore the influence of the substrate configuration, single dipole
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Bouregba, Rachid. "Études théorique et expérimentale des diodes à effet tunnel résonnant : utilisation en oscillation et en multiplication." Lille 1, 1991. http://www.theses.fr/1991LIL10094.

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L'objectif de ce travail est d'étudier le fonctionnement des diodes tunnel résonnant en vue d'applications hyperfréquences. L'idée est de tirer parti de l'effet de Résistance Différentielle Négative (RDN) et de la très faible inertie des mécanismes mis en jeu pour réaliser un oscillateur ou un multiplicateur de fréquence. A cette fin, nous présentons tout d'abord des résultats de calculs de probabilités de transmission et de caractéristiques de conduction d'une structure double barrière générique. Cette analyse nous permet de dégager des éléments d'optimisation en vue d'obtenir les fréquences
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Florence, Louis A. "Infrared Tapered Slot Antennas Coupled to Tunnel Diodes." Doctoral diss., University of Central Florida, 2012. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/5209.

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Tapered slot antennas (TSAs) have seen considerable application in the millimeter-wave portion of the spectrum. Desirable characteristics of TSAs include symmetric E- and H-plane antenna patterns, and broad non-resonant bandwidths. We investigate extension of TSA operation toward higher frequencies in the thermal infrared (IR), using a metal-oxide-metal diode as the detector. Several different infrared TSA design forms are fabricated using electron-beam lithography and specially developed thin-film processes. The angular antenna patterns of TSA-coupled diodes are measured at 10.6 micrometer wa
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Zhang, Yuewei. "Tunnel Junction-based Ultra-violet Light Emitting Diodes." The Ohio State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu1525423981882141.

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Chung, Sung-Yong. "Si/SiGe heterostructures materials, physics, quantum functional devices and their integration with heterostructure bipolar transistors /." Columbus, Ohio : Ohio State University, 2005. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1132244278.

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Zuo, Dingli. "Manufacturability of circuits based on resonant (interband) tunnelling diodes." Thesis, University of Cambridge, 2014. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.648793.

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Chevoir, François. "Effet tunnel resonnant assiste par diffusio dans les diodes double-barriere." Paris 11, 1992. http://www.theses.fr/1992PA112102.

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Depuis une dizaine d'annees, les composants a effet tunnel resonnant, dont la diode double-barriere constitue le prototype, suscitent de nombreux travaux de recherche, tant pour leurs applications potentielles (haute frequence et logique ultrarapide) que pour la comprehension du transport quantique. Nous proposons une theorie simple du transport electronique stationnaire prenant en compte la diffusion dans la region quantique. Ce modele est fonde sur une equation maitresse exprimant la transmission incoherente en fonction de la transmission coherente et des taux de transition entre etats coher
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Books on the topic "Tunnel diodes"

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Bessire, Cédric Dominic. Semiconducting nanowire tunnel devices: From all-Si tunnel diodes to III-V heterostructure tunnel FETs. Hartung-Gorre Verlag, 2013.

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Mizuta, Hiroshi. The physics and applications of resonant tunnelling diodes. Cambridge University Press, 1995.

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Kohlstedt, Hermann. Supraleiter-Isolator-Supraleiter Tunneldioden für radioastronomische Empfänger und tunnelmikroskopische Untersuchungen. H. Kohlstedt, 1989.

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L, Ash Robert, and Langley Research Center, eds. Thermal sensing of cryogenic wind tunnel model surfaces: Final report for the period May 15, 1984 to February 28, 1985. National Aeronautics and Space Administration, Langley Research Center, 1986.

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Tanoue, Tomonori, and Hiroshi Mizuta. Physics and Applications of Resonant Tunnelling Diodes. Cambridge University Press, 2011.

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Tanoue, Tomonori, and Hiroshi Mizuta. Physics and Applications of Resonant Tunnelling Diodes. Cambridge University Press, 2010.

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Tanoue, Tomonori, and Hiroshi Mizuta. The Physics and Applications of Resonant Tunnelling Diodes (Cambridge Studies in Semiconductor Physics and Microelectronic Engineering). Cambridge University Press, 2006.

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Yoo, Hyungmo. Effect of structural parameters on resonant tunneling diode performance. 1990.

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RCA Tunnel Diodes for Switching and Microwave Applications. Creative Media Partners, LLC, 2021.

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10

Vuillaume, D. Molecular electronics based on self-assembled monolayers. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.9.

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This article considers molecular electronics based on self-assembled monolayers. It begins with a brief overview of the nanofabrication of molecular devices, followed by a discussion of the electronic properties of several basic devices, from simple molecules such as molecular tunnel junctions and molecular semiconducting wires, to more complex ones such as molecular rectifying diodes. It also describes molecular switches and memories, focusing on three approaches called ‘conformational memory’, ‘charge-based memory’ and ‘RTD-based memory’ (RTD is resonant tunnelling diode). It shows that memo
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Book chapters on the topic "Tunnel diodes"

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Shaw, Melvin P., Vladimir V. Mitin, Eckehard Schöll, and Harold L. Grubin. "Tunnel Diodes." In The Physics of Instabilities in Solid State Electron Devices. Springer US, 1992. http://dx.doi.org/10.1007/978-1-4899-2344-8_3.

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Lin, Yu-Chuan. "Atomically Thin Resonant Tunnel Diodes." In Springer Theses. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-030-00332-6_7.

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Kuo, Yen-Kuang, Jih-Yuan Chang, Ya-Hsuan Shih, Fang-Ming Chen, and Miao-Chan Tsai. "Tunnel-Junction Light-Emitting Diodes." In Handbook of Optoelectronic Device Modeling and Simulation. CRC Press, 2017. http://dx.doi.org/10.1201/9781315152301-16.

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Gupta, K. M., and Nishu Gupta. "Majority Carrier Diodes (Tunnel Diode, Backward Diode, Schottky Barrier Diode, Ohmic Contacts, and Heterojunctions)." In Advanced Semiconducting Materials and Devices. Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-19758-6_7.

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Werner, Jürgen H. "Electrical Characterization of Interface States at Schottky Contacts and MIS Tunnel Diodes." In NATO ASI Series. Springer US, 1989. http://dx.doi.org/10.1007/978-1-4613-0795-2_14.

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Moraru, Daniel, Manoharan Muruganathan, Le The Anh, Ratno Nuryadi, Hiroshi Mizuta, and Michiharu Tabe. "Inter-band Current Enhancement by Dopant-Atoms in Low-Dimensional pn Tunnel Diodes." In Advances in Intelligent Systems and Computing. Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-46490-9_14.

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Sasaki, Yutaro, Shun Masui, Shumpei Miura, and Daniel Moraru. "Fabrication and Characterization of Silicon Tunnel Diodes Doped by Short-Time Rapid Thermal Annealing." In Recent Advances in Technology Research and Education. Springer Nature Switzerland, 2024. http://dx.doi.org/10.1007/978-3-031-54450-7_11.

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Sahoo, Girija Shankar, Manish Verma, and Guru Prasad Mishra. "A Comparative Study on AlGaAs and GaAs Tunnel Diodes for Dual Junction Solar Cells." In Handbook of Emerging Materials for Semiconductor Industry. Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-99-6649-3_27.

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Conley, John F., and Nasir Alimardani. "Impact of Electrode Roughness on Metal-Insulator-Metal (MIM) Diodes and Step Tunneling in Nanolaminate Tunnel Barrier Metal-Insulator-Insulator-Metal (MIIM) Diodes." In Rectenna Solar Cells. Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-3716-1_6.

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Enns, Richard H., and George C. McGuire. "Relaxation Oscillations: Tunnel Diode." In Nonlinear Physics with Mathematica for Scientists and Engineers. Birkhäuser Boston, 2004. http://dx.doi.org/10.1007/978-1-4612-0211-0_32.

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Conference papers on the topic "Tunnel diodes"

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Wang, Rui, Huabin Yu, Muhammad Hunain Memon, Wei Chen, and Haiding Sun. "Superior AlGaN-Based Deep Ultraviolet Light- Emitting Diodes Incorporated with a Tunnel Junction Located on the N-Side of the Device." In CLEO: Science and Innovations. Optica Publishing Group, 2024. http://dx.doi.org/10.1364/cleo_si.2024.sm1o.3.

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We propose an AlGaN-based DUV LED incorporated with a n-side located tunnel junction to reverse the carrier injection direction, which can improve the light output power and internal quantum efficiency while reducing the efficiency droop.
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Gumber, Karan, Corinne Dejous, and Simon Hemour. "Tunnel Diode-Based Harmonic Backscatter Amplifier." In 2024 IEEE INC-USNC-URSI Radio Science Meeting (Joint with AP-S Symposium). IEEE, 2024. http://dx.doi.org/10.23919/inc-usnc-ursi61303.2024.10632465.

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Chaney, Alexander, Meng Qi, S. M. Islam, Huili Grace Xing, and Debdeep Jena. "GaN tunnel switch diodes." In 2016 74th Annual Device Research Conference (DRC). IEEE, 2016. http://dx.doi.org/10.1109/drc.2016.7548409.

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Özbay, E., and D. M. Bloom. "Triggering with Subpicosecond Jitter Using Resonant Tunneling Diodes." In Picosecond Electronics and Optoelectronics. Optica Publishing Group, 1991. http://dx.doi.org/10.1364/peo.1991.fb1.

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Resonant tunneling diodes (RTD's) with their superior high frequency characteristics, are attractive for high speed applications. As RTD's have terminal characteristics very similar to the Esaki Tunnel Diode, all current high speed applications of Esaki Tunnel Diode are good candidates for the use of new tunneling device. One such application is in high frequency trigger circuits.
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Amato, Francesco, and Gregory D. Durgin. "Tunnel Diodes for Backscattering Communications." In 2018 2nd URSI Atlantic Radio Science Meeting (AT-RASC). IEEE, 2018. http://dx.doi.org/10.23919/ursi-at-rasc.2018.8471622.

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Riel, H., K. E. Moselund, C. Bessire, et al. "InAs-Si heterojunction nanowire tunnel diodes and tunnel FETs." In 2012 IEEE International Electron Devices Meeting (IEDM). IEEE, 2012. http://dx.doi.org/10.1109/iedm.2012.6479056.

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Mihaychuk, James G., Mike W. Denhoff, Sean P. McAlister, et al. "Light emission in silicon tunnel diodes." In Photonics North, edited by John C. Armitage, Simon Fafard, Roger A. Lessard, and George A. Lampropoulos. SPIE, 2004. http://dx.doi.org/10.1117/12.567082.

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Botsula, O. V., E. D. Prokhorov, A. V. Suzdaltsev, and A. V. Djadchenko. "AIN/AlxGa1-xN Resonance-Tunnel Diodes." In 2007 International Kharkiv Symposium Physics and Engrg. of Millimeter and Sub-Millimeter Waves (MSMW). IEEE, 2007. http://dx.doi.org/10.1109/msmw.2007.4294759.

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Thompson, Phillip E., Glenn G. Jernigan, Si-Young Park, et al. "Simplified Si resonant interband tunnel diodes." In 2007 International Semiconductor Device Research Symposium. IEEE, 2007. http://dx.doi.org/10.1109/isdrs.2007.4422467.

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Krishnamoorthy, Sriram, Pil Park, and Siddharth Rajan. "III-nitride tunnel diodes with record forward tunnel current density." In 2011 69th Annual Device Research Conference (DRC). IEEE, 2011. http://dx.doi.org/10.1109/drc.2011.6086644.

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Reports on the topic "Tunnel diodes"

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Yeninas, Steven Lee. Tunnel-diode resonator and nuclear magnetic resonance studies of low-dimensional magnetic and superconducting systems. Office of Scientific and Technical Information (OSTI), 2013. http://dx.doi.org/10.2172/1226524.

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Murtz, Manfred. Toward extended-cavity grating-tuned mid-infrared diode laser operation. National Bureau of Standards, 1997. http://dx.doi.org/10.6028/nist.tn.1388.

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