Добірка наукової літератури з теми "Plasma Electronics"

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Статті в журналах з теми "Plasma Electronics"

1

Shur, Michael S., and Victor Ryzhii. "Plasma Wave Electronics." International Journal of High Speed Electronics and Systems 13, no. 02 (2003): 575–600. http://dx.doi.org/10.1142/s0129156403001831.

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Plasma waves are oscillations of electron density in time and space. In deep submicron field effect transistors plasma wave frequencies lie in the terahertz range and can be tuned by applied gate bias. Since the plasma wave frequency is much larger that the inverse electron transit time in the device, it is easier to reach "ballistic" regimes for plasma waves than for electrons moving with drift velocities. In the ballistic regime, no collisions of electrons with impurities or lattice vibrations occur on a time scale on the order of the plasma oscillation period, and the device channel acts as
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2

Kuzelev, M. V., Anri A. Rukhadze, P. S. Strelkov, and A. G. Shkvarunets. "Relativistic plasma UHF electronics." Uspekhi Fizicheskih Nauk 146, no. 8 (1985): 709. http://dx.doi.org/10.3367/ufnr.0146.198508g.0709.

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3

Kuzelev, M. V., O. T. Loza, A. A. Rukhadze, P. S. Strelkov, and A. G. Shkvarunets. "Plasma relativistic microwave electronics." Plasma Physics Reports 27, no. 8 (2001): 669–91. http://dx.doi.org/10.1134/1.1390539.

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Kuzelev, M. V., Anri A. Rukhadze, P. S. Strelkov, and A. G. Shkvarunets. "Relativistic plasma UHF electronics." Soviet Physics Uspekhi 28, no. 8 (1985): 724–26. http://dx.doi.org/10.1070/pu1985v028n08abeh003886.

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5

Shur, M. "Plasma wave terahertz electronics." Electronics Letters 46, no. 26 (2010): S18. http://dx.doi.org/10.1049/el.2010.8457.

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Fainberg, Ya B. "Plasma electronics and plasma acceleration of charged particles." Plasma Physics Reports 26, no. 4 (2000): 335–43. http://dx.doi.org/10.1134/1.952858.

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7

Loza, O. T., A. G. Shkvarunets, and P. S. Strelkov. "Experimental plasma relativistic microwave electronics." IEEE Transactions on Plasma Science 26, no. 3 (1998): 615–27. http://dx.doi.org/10.1109/27.700798.

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Strelkov, P. S. "Experimental relativistic plasma microwave electronics." Physics-Uspekhi 62, no. 5 (2019): 465–86. http://dx.doi.org/10.3367/ufne.2018.09.038443.

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Martínez Montejano, Roberto Carlos, Carlos Miguel Castillo Escandón, Víctor Esteban Espinoza López, Isaac Campos Cantón, María Guadalupe Neira Velázquez, and Gustavo Soria Arguello. "Construction of a power electronic source for cold plasma generation." Ingeniería Investigación y Tecnología 20, no. 4 (2019): 1–12. http://dx.doi.org/10.22201/fi.25940732e.2019.20n4.047.

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This paper presents the development of a high voltage and high-frequency power electronics source, for plasma generation, at atmospheric pressure and vacuum, using helium and air as working gases. The source design consists of an inductive (L) full bridge series resonant inverter at high frequency, where the control implemented allows varying duty cycle and frequency. Plasma generation is made by high voltage with the power signal applied on two electrodes, which provides a strong electric field that excites, and thus, ionize helium particles or air particles. The power electronic source opera
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Li, Botong, Imteaz Rahaman, Hunter D. Ellis, et al. "Plasma Treatment Technologies for GaN Electronics." Electronics 13, no. 22 (2024): 4343. http://dx.doi.org/10.3390/electronics13224343.

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Nowadays, the third-generation semiconductor led by GaN has brought great changes to the semiconductor industry. Utilizing its characteristics of a wide bandgap, high breakdown Electric field, and high electron mobility, GaN material is widely applied in areas such as 5G communication and electric vehicles to improve energy conservation and reduce emissions. However, with the progress in the development of GaN electronics, surface and interface defects have become a main problem that limits the further promotion of their performance and stability, increasing leakage current and causing degrada
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Дисертації з теми "Plasma Electronics"

1

Roth, Weston Charles 1970. "Electrical characterization and plasma impedance measurements of a RF plasma etch system." Thesis, The University of Arizona, 1995. http://hdl.handle.net/10150/291351.

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A modified Tegal MCR-1 plasma etch system has been electrically characterized, and the plasma impedance has been measured at 13.56MHz. Important aspects of radio-frequency (RF) impedance measurements are addressed as they pertain to the measurement of the plasma impedance. These include: transmission line effects, magnitude and phase errors of the measurement probes, and the intrinsic impedance of the empty plasma chamber. Plasma harmonics are discussed, and a technique for measuring the plasma impedance at harmonic frequencies is presented. Transients in the plasma impedance are observed duri
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2

Hansson, Björn. "Laser-Plasma Sources for Extreme-Ultraviolet Lithography." Doctoral thesis, KTH, Physics, 2003. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3677.

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<p>This thesis describes the development and characterizationof a liquidxenon- jet laser-plasma source forextreme-ultraviolet (EUV) radiation. It is shown how thissource may be suitable for production-scale EUV lithography(EUVL).</p><p>EUVL is one of the main candidates to succeeddeep-ultraviolet (DUV) lithography for large-scalemanufacturing of integrated circuits (IC). However, a majorobstacle towards the realization of EUVL is the currentunavailability of a source meeting the tough requirements onespecially power and cleanliness for operation in an EUVLstepper. The liquid-xenon-jet laser-pl
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3

Marrett, Sean 1960. "A high-order finite element method for Tokamak plasma equilibria /." Thesis, McGill University, 1992. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=56809.

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A numerical method for the solution of the axisymmetric, free-boundary, Tokamak equilibrium problem is described. The method uses high-order polynomials defined over a mesh of triangular finite elements to solve the magnetohydrodynamic equilibrium (Grad-Shafranov) equation. Arbitrary coil and plasma current configurations can be specified. The formulation incorporates a nonlinear procedure for computing the coil currents required to place the plasma in a desired position. The solution to the nonlinear Grad-Shafranov equation is computed using a modified Newton's method. The inner-most system o
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DeLoach, Charles Alan 1960. "Analysis of plasma etch defects utilizing a comb test structure." Thesis, The University of Arizona, 1992. http://hdl.handle.net/10150/278211.

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Three metal compositions are patterned via plasma etching into comb structures. The comb structures have pitches of 4 μm, 5 μm, 7 μm and 12 μm, with a line width of 2 μm, on a field oxide of 8,000 Angstroms thickness, using <111> p-type substrates. These comb test structures have been used to determine the number of bridges, and thus the yield, of the metal compositions: pure aluminum, silicon(2%)-aluminum, and copper(0.5%)-silicon(2%)-aluminum. Bridge failures are photographed and classified according to the source of the defect. The defects due to plasma particles are used to determine a yie
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5

Zaarouri, Kamel. "Closed-loop control of plasma osmolality in patients with central diabetes insipidus." Thesis, McGill University, 2010. http://digitool.Library.McGill.CA:8881/R/?func=dbin-jump-full&object_id=92300.

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Poolcharuansin, Phitsanu. "The development of electrical plasma diagnostics for HiPIMS discharges." Thesis, University of Liverpool, 2012. http://livrepository.liverpool.ac.uk/7495/.

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High power impulse magnetron sputtering (HiPIMS) is a plasma-based thin film deposition technique in which extremely high power pulses are applied to a conventional magnetron sputtering source. As a result, the plasma density in HiPIMS discharges is considerably increased up to 1E19 per cubic metre, about three orders of magnitude higher than that in conventional direct current magnetron sputtering (DCMS) discharges. Hence the vapour of the sputtered species becomes highly ionised, leading to remarkable improvement in the microstructure and the properties of depositing films. To better control
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7

Julander, Anneli. "Exposure to brominated flame retardants in electronics recycling : air and human plasma levels /." Örebro : Örebro universitetsbibliotek, 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:oru:diva-91.

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8

Kong, Yung 1967. "Particle contamination in sulfur-hexafluoride/argon plasma etching process." Thesis, The University of Arizona, 1991. http://hdl.handle.net/10150/277919.

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Process generated particle contamination on unpatterned silicon wafers etched in an SF6/argon plasma using a Tegal MCR-1 etcher in the plasma triode-1 mode was characterized using response surface methodology. Particle deposition was observed to be a predictable function of plasma parameter space, which can be determined by relatively few statistically designed experiments. A model of particle deposition as a function of 13.56 MHz chamber electrode rf power, chamber pressure, gas flow rate, etch time and 100 kHz wafer electrode power was constructed. It is found that particle deposition depend
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9

Bowes, Michael. "Plasma diagnosis of reactive high power impulse magnetron sputtering (HiPIMS) discharges." Thesis, University of Liverpool, 2014. http://livrepository.liverpool.ac.uk/18833/.

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Reactive HiPIMS discharges have been investigated by employing a selection of plasma diagnostic techniques. Plasma dynamics in a reactive HiPIMS discharge were studied by means of a single Langmuir probe which revealed electron and positive ion densities of the order of 10^17 to 10^18 m^-3 in typical substrate positions, the temporal evolutions of which exhibited a dual-peak structure attributed to the propagation of an ion acoustic wave or the compression and subsequent rarefaction of the process gas caused by the intense 'sputter wind'. The compression phase is also thought to be the cause o
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10

Zhan, Yiyi. "PC-based visual simulation of high pressure arc plasma." Thesis, University of Liverpool, 2011. http://livrepository.liverpool.ac.uk/3433/.

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Книги з теми "Plasma Electronics"

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Makabe, T. Plasma electronics: Applications in microelectronic device fabrication. Taylor&Francis, 2006.

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2

United States. National Aeronautics and Space Administration., ed. Hollow cathode plasma coupling study - 1986: Annual report. National Aeronautics and Space Administration, 1986.

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3

Congresso nazionale di Elettronica quantistica e plasmi (5th 1988 Florence, Italy). Quantum electronics and plasma physics: 5th Italian conference. Società italiana di fisica, 1989.

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4

Cheung, Kin P. Plasma Charging Damage. Springer London, 2001.

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5

W, Crompton R., and Australia-Japan Workshop on Gaseous Electronics and its Applications (2nd : 1990 : Tozanso, Japan), eds. Gaseous electronics and its applications. KTK Scientific Publishers, 1991.

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6

Diran, Apelian, and Szekely Julian 1934-, eds. Plasma processing and synthesis of materials III: Symposium held April 17-19, 1990, San Francisco, California, U.S.A. Materials Research Society, 1991.

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7

W, York Kenneth, Bowers Glen E, and United States. National Aeronautics and Space Administration., eds. Integration issues of a plasma contactor power electronics unit. National Aeronautics and Space Administration, 1995.

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8

I, Ėfendiev K., та S.M. Kirov adyna Azărbaĭjan Dȯvlăt Universiteti., ред. Nekotorye voprosy fizicheskoĭ ėlektroniki: Tematicheskiĭ sbornik nauchnykh trudov = Fiziki elektronikanyn băʼzi măsălălări : elmi ăsărdărin tematik măjmuăsi. Azerbaĭdzhanskiĭ gos. universitet, 1987.

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9

A, Hamley John, and United States. National Aeronautics and Space Administration., eds. Development of a power electronics unit for the space station plasma contactor. National Aeronautics and Space Administration, 1993.

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10

Congresso, nazionale Elettronica quantistica e. plasmi (5th 1988 Florence Italy). Quantum electronics and plasma physics, 5th Italian conference: Firenze, 16-19 November 1988. Italian Physical Society, 1989.

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Частини книг з теми "Plasma Electronics"

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Dyakonov, M., and M. S. Shur. "Plasma Wave Electronics for Terahertz Applications." In Terahertz Sources and Systems. Springer Netherlands, 2001. http://dx.doi.org/10.1007/978-94-010-0824-2_12.

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Kumar, Avishek, Daniel Grant, Surjith Alancherry, Ahmed Al-Jumaili, Kateryna Bazaka, and Mohan V. Jacob. "Plasma Polymerization: Electronics and Biomedical Application." In Plasma Science and Technology for Emerging Economies. Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-4217-1_11.

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Ursu, I., D. Apostol, M. Stoica, et al. "Laser Interferometry at 10.6 μm for Plasma Diagnostics." In Trends in Quantum Electronics. Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-662-10624-2_28.

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Lippens, D., and J. L. Nieruchalski. "Three Picosecond Oscillations in Avalanche Electron-Hole Plasma Induced by Energy Relaxation Phenomena." In High-Speed Electronics. Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82979-6_9.

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Bakos, J. S. "Optically Pumped FIR Lasers and Their Application in the Plasma Diagnostics." In Trends in Quantum Electronics. Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-662-10624-2_30.

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Brueck, S. R. J., V. Diadiuk, T. Jones, and W. Lenth. "High-Speed Internal Photoemission Detectors Enhanced by Grating Coupling to Surface Plasma Waves." In Picosecond Electronics and Optoelectronics. Springer Berlin Heidelberg, 1985. http://dx.doi.org/10.1007/978-3-642-70780-3_38.

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7

Holst, Thorsten, and Jørn Bindslev Hansen. "Magnetic Tuning of Plasma Oscillations in Long Josephson Junctions." In Nonlinear Superconductive Electronics and Josephson Devices. Springer US, 1991. http://dx.doi.org/10.1007/978-1-4615-3852-3_28.

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Lei, Kaizhuo, Ning Li, Hai Huang, Jianguo Huang, and Jiankang Qu. "The Characteristics of Underwater Plasma Discharge Channel and Its Discharge Circuit." In Advanced Electrical and Electronics Engineering. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-19712-3_79.

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Antipov, A. A., N. G. Basov, A. Z. Grasiuk, L. L. Losev, A. P. Lutsenko, and E. A. Meshalkin. "Laser-Plasma Detection: Generation of Ultrahigh — Frequency Currents on Solid Surface Exposed to Laser Radiation." In Trends in Quantum Electronics. Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-662-10624-2_17.

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Montgomery, Matthew, Chris Funke, Neal Magdefrau, et al. "Direct Write Printed Electronics and Materials Synthesis Using Non-equilibrium Plasma-Based Techniques." In Resilient Hybrid Electronics for Extreme/Harsh Environments. CRC Press, 2024. http://dx.doi.org/10.1201/9781003138945-7.

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Тези доповідей конференцій з теми "Plasma Electronics"

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Gatling, George, Bill Amatucci, and Erik Tejero. "NRL SP ADE-2 Plasma Diagnostic Electronics." In 2025 United States National Committee of URSI National Radio Science Meeting (USNC-URSI NRSM). IEEE, 2025. https://doi.org/10.23919/usnc-ursinrsm66067.2025.10907036.

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2

Shur, Michael. "Plasma wave terahertz electronics." In 2008 33rd International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz 2008). IEEE, 2008. http://dx.doi.org/10.1109/icimw.2008.4665864.

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Mustafaev, A. S., A. Y. Grabovskiy, V. I. Demidov, I. Kaganovich, and I. Schweigert. "Nonlocal effects in beam generated plasmas for plasma electronics." In 2012 IEEE 39th International Conference on Plasma Sciences (ICOPS). IEEE, 2012. http://dx.doi.org/10.1109/plasma.2012.6383894.

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Zavyalov, M. A. "PLASMA NON-RELATIVISTIC MICROWAVE ELECTRONICS: BEAM-PLASMA TRAVELING WAVE LAMP." In Plasma emission electronics. Buryat Scientific Center of SB RAS Press, 2023. http://dx.doi.org/10.31554/978-5-7925-0655-8-2023-17-26.

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Coenen, Nico. "Openair-Plasma in Electronics Manufacturing." In 2022 IEEE 9th Electronics System-Integration Technology Conference (ESTC). IEEE, 2022. http://dx.doi.org/10.1109/estc55720.2022.9939467.

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Klimov, A. S., I. Yu Bakeev, A. A. Zenin, Zh E. Dagri, and E. M. Oks. "PRE-VACUUM PLASMA ELECTRONIC SOURCE WITH TWO-STAGE DISCHARGE SYSTEM." In Plasma emission electronics. Buryat Scientific Center of SB RAS Press, 2023. http://dx.doi.org/10.31554/978-5-7925-0655-8-2023-133-137.

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Oks, E. M. "A SUBJECTIVE VIEW OF THE HISTORY AND CURRENT STATE OF PLASMA EMISSION ELECTRONICS." In Plasma emission electronics. Buryat Scientific Center of SB RAS Press, 2023. http://dx.doi.org/10.31554/978-5-7925-0655-8-2023-9-16.

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Laput, O. A., L. V. Domracheva, A. A. Bryuzgina, Yu Kh Akhmadeev, and I. A. Kurzina. "THE EFFECT OF PLASMA MODIFICATION ON THE PHYSICO-CHEMICAL PROPERTIES OF BIOMEDICAL POLYMER MATERIALS." In Plasma emission electronics. Buryat Scientific Center of SB RAS Press, 2023. http://dx.doi.org/10.31554/978-5-7925-0655-8-2023-228-232.

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Bugaev, A. S., V. I. Gushenets, E. M. Oks, and M. V. Shandrikov. "HIGH-FREQUENCY MODULATION OF AN ELECTRON BEAM IN A DIODE WITH A PLASMA-FILLED OPTICAL SYSTEM." In Plasma emission electronics. Buryat Scientific Center of SB RAS Press, 2023. http://dx.doi.org/10.31554/978-5-7925-0655-8-2023-123-132.

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Remnev, G. E., A. A. Bukharkin, M. V. Zhuravlev, et al. "PLASMA SOURCES OF PULSED ION ACCELERATORS." In Plasma emission electronics. Buryat Scientific Center of SB RAS Press, 2023. http://dx.doi.org/10.31554/978-5-7925-0655-8-2023-50-55.

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Звіти організацій з теми "Plasma Electronics"

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Shur, Michael. Terahertz Plasma Wave Electronics. Defense Technical Information Center, 2001. http://dx.doi.org/10.21236/ada398910.

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Granatstein, V. L. Plasma Microwave Electronics: Studies of High Power Plasma-Loaded Backward Wave Oscillators. Defense Technical Information Center, 1995. http://dx.doi.org/10.21236/ada297853.

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Shenggang, Liu, and Karl H. Schoenback. Theoretical Studies on Microwave Plasma Electronics and Microhollow Cathode Discharges. Defense Technical Information Center, 2000. http://dx.doi.org/10.21236/ada375944.

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Birdsall, C. K. Electronics Research Laboratory, Plasma Theory and Simulation Group annual progress report, January 1, 1989--December 31, 1989. Office of Scientific and Technical Information (OSTI), 1989. http://dx.doi.org/10.2172/6055851.

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Shur, Michael S. Plasma Wave Electronic Terahertz Technology. Defense Technical Information Center, 2003. http://dx.doi.org/10.21236/ada414495.

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Nighan, William L. Investigation of Plasma Processes in Electronic Transition Lasers. Defense Technical Information Center, 1989. http://dx.doi.org/10.21236/ada206713.

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Starrett, Charles, and Nathaniel Shaffer. Multiple Scattering Theory for Dense Plasma Electronic Structure. Office of Scientific and Technical Information (OSTI), 2020. http://dx.doi.org/10.2172/1671072.

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Thompson, Matthew Colin. Plasma density transition trapping of electrons in plasma wake field accelerators. Office of Scientific and Technical Information (OSTI), 2004. http://dx.doi.org/10.2172/1415855.

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Manheimer, Wallace M. Plasma Reflectors for Electronic Beam Steering in Radar Systems. Defense Technical Information Center, 1991. http://dx.doi.org/10.21236/ada234560.

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Powell, John D. Electronic Partition Functions for Plasmas in a Capillary Discharge. Defense Technical Information Center, 2000. http://dx.doi.org/10.21236/ada392777.

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